DIODES · FETs & Power MOSFETs · MPN DMTH10H032LFVW-13
No reviews yet — be the first to review DIODES DMTH10H032LFVW-13.
| Output Capacitance(Coss) | 165pF |
|---|---|
| Pd - Power Dissipation | 3.8W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 11.9nC@10V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF |
| RDS(on) | 50mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 683pF |
3.8W 100V 26A 2.5V 50mΩ@4.5V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS