DIODES DMTH10H025SK3-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H025SK3-13

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)21.4nC@10V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)46.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)20.4pF
RDS(on)23mΩ@10V;30mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.544nF

Technical details

N-Channel 100V 46.3A 3.7W Surface Mount TO-252(DPAK)

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