DIODES DMTH10H025LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H025LPSQ-13

No reviews yet — be the first to review DIODES DMTH10H025LPSQ-13.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)9.3A;45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.2W;79W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.477nF

Technical details

100V 3V 23mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs