DIODES DMTH10H025LK3-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H025LK3-13

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)51.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.477nF

Technical details

N-Channel 100V 51.7A 100W Surface Mount TO-252(DPAK)

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