DIODES DMTH10H017LPDQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H017LPDQ-13

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Specifications

Current - Continuous Drain(Id)59A
RDS(on)13.7mΩ@10V;23.8mΩ@4.5V
Pd - Power Dissipation2.6W
Gate Threshold Voltage (Vgs(th))1V;3V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)1.986nF
Gate Charge(Qg)14.4nC@4.5V;28.6nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)333pF

Technical details

N-Channel Array 100V 2.6W Surface Mount PowerDI-5060-8

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