DIODES · FETs & Power MOSFETs · MPN DMTH10H015SPSQ-13
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| Gate Charge(Qg) | 30.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.4A;50.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.5W;55W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 14.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.343nF |
100V 4V 14.5mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS