DIODES DMTH10H015SK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H015SK3Q-13

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Specifications

Gate Charge(Qg)30.1nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)487pF
Current - Continuous Drain(Id)59A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)20mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.343nF
TypeN-Channel

Technical details

100V 59A 3.7W 20mΩ@6V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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