DIODES DMTH10H010LCT

DIODES · FETs & Power MOSFETs · MPN DMTH10H010LCT

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)58.4nC@10V
Output Capacitance(Coss)764pF
Current - Continuous Drain(Id)108A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation166W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.166nF
TypeN-Channel

Technical details

100V 108A 3.5V 166W 9.5mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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