DIODES DMTH10H009SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H009SPSQ-13

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)14A;86A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W;100W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)8.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.085nF

Technical details

N-Channel 100V 14A 86A 1.6W 100W Surface Mount PowerDI5060-8

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