DIODES DMTH10H009LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H009LPSQ-13

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Specifications

Gate Charge(Qg)40.2nC@10V;20.2nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)536pF
Current - Continuous Drain(Id)91A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)13.7pF
RDS(on)6mΩ@10V;9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.309nF

Technical details

N-Channel 100V 91A 100W Surface Mount PowerDI-5060-8

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