DIODES DMTH10H009LPS-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H009LPS-13

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Specifications

Gate Charge(Qg)40.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)14A;100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W;125W
Reverse Transfer Capacitance (Crss@Vds)13.7pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.309nF

Technical details

100V 2.5V 8mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS

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