DIODES DMTH10H005SCT

DIODES · FETs & Power MOSFETs · MPN DMTH10H005SCT

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Specifications

Gate Charge(Qg)111.7nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.474nF

Technical details

100V 140A 187W Through Hole TO-220AB

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