DIODES DMTH10H003SPSW-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H003SPSW-13

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)166A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.6W;167W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.542nF

Technical details

N-Channel 100V 166A 2.6W 167W Surface Mount PowerDI5060-8

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