DIODES DMT8012LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT8012LSS-13

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)9.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.949nF

Technical details

N-Channel 80V 9.7A 1.5W Surface Mount SO-8

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