DIODES DMT8012LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT8012LPS-13

No reviews yet — be the first to review DIODES DMT8012LPS-13.

Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation113W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)21mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.949nF

Technical details

N-Channel 80V 65A 113W Surface Mount PowerDI5060-8

Related FETs & Power MOSFETs