DIODES DMT8012LK3-13

DIODES · FETs & Power MOSFETs · MPN DMT8012LK3-13

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.949nF
TypeN-Channel

Technical details

N-Channel 80V 44A 2.7W Surface Mount TO-252

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