DIODES DMT8012LFG-7

DIODES · FETs & Power MOSFETs · MPN DMT8012LFG-7

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation30W
RDS(on)22mΩ@6V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 80V 35A 30W Surface Mount PowerDI3333-8

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