DIODES DMT8008LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT8008LSS-13

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)47nC@10V
Current - Continuous Drain(Id)13A;32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.84nF

Technical details

80V 1.3V 1.3W 8mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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