DIODES DMT8008LK3-13

DIODES · FETs & Power MOSFETs · MPN DMT8008LK3-13

No reviews yet — be the first to review DIODES DMT8008LK3-13.

Specifications

Drain to Source Voltage80V
Gate Charge(Qg)41.2nC@10V
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.345nF

Technical details

80V 95A 2.8V 1.7W 7mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs