DIODES DMT8008LFG-7

DIODES · FETs & Power MOSFETs · MPN DMT8008LFG-7

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)37.7nC@10V
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation23.5W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)10.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.254nF
TypeN-Channel

Technical details

N-Channel 80V 48A 23.5W Surface Mount PowerDI3333-8

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