DIODES DMT8007LPSW-13

DIODES · FETs & Power MOSFETs · MPN DMT8007LPSW-13

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Specifications

Gate Charge(Qg)45.3nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)685pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation104W
RDS(on)9.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)37pF
Input Capacitance(Ciss)2.682nF

Technical details

80V 100A 2.8V 104W 9.5mΩ@4.5V PowerDI5060-8 Single FETs, MOSFETs RoHS

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