DIODES DMT69M8LFV-7

DIODES · FETs & Power MOSFETs · MPN DMT69M8LFV-7

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Specifications

Gate Charge(Qg)33.5nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)13.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.925nF
TypeN-Channel

Technical details

N-Channel 60V 45A 42W Surface Mount PDFN-8(3.3x3.3)

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