DIODES DMT69M5LH3

DIODES · FETs & Power MOSFETs · MPN DMT69M5LH3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)28.4nC@10V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.3W;96W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.406nF

Technical details

60V 75A 2.5V 10.5mΩ@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS

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