DIODES DMT69M5LFVW-13

DIODES · FETs & Power MOSFETs · MPN DMT69M5LFVW-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)28.4nC@10V
Current - Continuous Drain(Id)14.8A;40.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.74W;20.5W
RDS(on)8.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.406nF

Technical details

60V 2.5V 8.3mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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