DIODES · FETs & Power MOSFETs · MPN DMT68M8LSS-13
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| Gate Charge(Qg) | 15.6nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 12.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.107nF |
N-Channel 60V 12.1A 1.3W Surface Mount SO-8