DIODES DMT68M8LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT68M8LPS-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)14.1A;69.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.4W;56.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.078nF

Technical details

N-Channel 60V 14.1A 69.2A 2.4W 56.8W Surface Mount PowerDI5060-8

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