DIODES DMT67M8LK3-13

DIODES · FETs & Power MOSFETs · MPN DMT67M8LK3-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)37.5nC@10V
Current - Continuous Drain(Id)87A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W;89.3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.13nF

Technical details

60V 87A 2.5V 7mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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