DIODES · FETs & Power MOSFETs · MPN DMT67M8LCGQ-7
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 37.5nC@10V |
| Current - Continuous Drain(Id) | 16A;64.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | - |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.13nF |
60V 2.5V 5.7mΩ@10V 1 N-channel VDFN3333-8 Single FETs, MOSFETs RoHS