DIODES · FETs & Power MOSFETs · MPN DMT64M8LSS-13
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| Gate Charge(Qg) | 47.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.664nF |
60V 17A 2.3V 2.2W 5mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS