DIODES · FETs & Power MOSFETs · MPN DMT64M8LCG-7
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| Gate Charge(Qg) | 47.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 16.1A;77.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 990mW |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.664nF |
N-Channel 60V 16.1A 77.8A 990mW Surface Mount V-DFN3333-8