DIODES DMT64M2LPSW-13

DIODES · FETs & Power MOSFETs · MPN DMT64M2LPSW-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)46.7nC@10V
Current - Continuous Drain(Id)20.7A;100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.8W;83.3W
Reverse Transfer Capacitance (Crss@Vds)79pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.799nF

Technical details

60V 2.5V 4.4mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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