DIODES · FETs & Power MOSFETs · MPN DMT64M1LPSW-13
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| Gate Charge(Qg) | 51.4nC@10V |
|---|---|
| Drain to Source Voltage | 65V |
| Current - Continuous Drain(Id) | 21.8A;81.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.14W;44W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.626nF |
65V 2.5V 4.4mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS