DIODES · FETs & Power MOSFETs · MPN DMT616MLSS-13
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| Gate Charge(Qg) | 13.6nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1.39W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 21mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
60V 10A 2.2V 1.39W 21mΩ@4.5V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS