DIODES DMT6018LDR-13

DIODES · FETs & Power MOSFETs · MPN DMT6018LDR-13

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Specifications

Current - Continuous Drain(Id)8.8A
RDS(on)26mΩ@4.5V
Pd - Power Dissipation1.1W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)15pF
Number2 N-Channel
Input Capacitance(Ciss)869pF
Gate Charge(Qg)13.9nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 8.8A 1.1W Surface Mount VDFN3030-8

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