DIODES DMT6017LDV-13

DIODES · FETs & Power MOSFETs · MPN DMT6017LDV-13

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Specifications

Current - Continuous Drain(Id)25.3A
Pd - Power Dissipation2.34W
RDS(on)29mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.3V
Drain to Source Voltage65V
Type-
Reverse Transfer Capacitance (Crss@Vds)29pF
Number-
Input Capacitance(Ciss)891pF
Gate Charge(Qg)15.3nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)223pF

Technical details

25.3A 2.34W 29mΩ@4.5V 2.3V VDFN-8 FET, MOSFET Arrays RoHS

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