DIODES DMT6016LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT6016LSS-13

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)282pF
Current - Continuous Drain(Id)9.2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)28mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)864pF
TypeN-Channel

Technical details

N-Channel 60V 9.2A 2.1W Surface Mount SO-8

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