DIODES DMT6016LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT6016LPS-13

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Specifications

Gate Charge(Qg)8.4nC@4.5V;17nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)282pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)15mΩ@10V;24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)864pF

Technical details

N-Channel 60V 32A 26W Surface Mount PowerDI5060-8

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