DIODES DMT6015LPDW-13

DIODES · FETs & Power MOSFETs · MPN DMT6015LPDW-13

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Specifications

Current - Continuous Drain(Id)17.1A
Pd - Power Dissipation7.9W
RDS(on)24.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Type-
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

17.1A 7.9W 24.5mΩ@4.5V 2.5V 2 N-Channel DFN-8 FET, MOSFET Arrays RoHS

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