DIODES DMT6013LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT6013LSS-13

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)14.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.081nF

Technical details

60V 10A 2.5V 1.4W 14.3mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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