DIODES DMT6013LFDF-13

DIODES · FETs & Power MOSFETs · MPN DMT6013LFDF-13

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation900mW
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.081nF

Technical details

60V 10A 2.3V 900mW 15mΩ@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS

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