DIODES DMT6012LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT6012LSS-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)22.2nC
Current - Continuous Drain(Id)10.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)27.5pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.522nF

Technical details

N-Channel 60V 10.4A 1.2W Surface Mount SO-8

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