DIODES · FETs & Power MOSFETs · MPN DMT6012LPSW-13
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| Gate Charge(Qg) | 22.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 13.1A;31.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W;17.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 27.5pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.522nF |
60V 2.5V 12mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS