DIODES DMT6012LFV-13

DIODES · FETs & Power MOSFETs · MPN DMT6012LFV-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)22.2nC@10V
Current - Continuous Drain(Id)43.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.95W;33.78W
Reverse Transfer Capacitance (Crss@Vds)27.5pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.522nF

Technical details

60V 43.3A 2.5V 12mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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