DIODES · FETs & Power MOSFETs · MPN DMT6011LSS-13
No reviews yet — be the first to review DIODES DMT6011LSS-13.
| Gate Charge(Qg) | 22.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.072nF |
60V 10.6A 2.5V 1.4W 11mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS