DIODES DMT6011LPDW-13

DIODES · FETs & Power MOSFETs · MPN DMT6011LPDW-13

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Specifications

Current - Continuous Drain(Id)40A
RDS(on)-
Pd - Power Dissipation37.9W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Type-
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)22.2nC@10V
Operating Temperature-
Output Capacitance(Coss)-

Technical details

40A 37.9W 2.5V 2 N-Channel DFN-8 FET, MOSFET Arrays RoHS

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