DIODES · FETs & Power MOSFETs · MPN DMT6010LPS-13
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| Gate Charge(Qg) | 41.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 13.5A;80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.2W;113W |
| Reverse Transfer Capacitance (Crss@Vds) | 38.5pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.09nF |
60V 8mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS