DIODES DMT6009LFG-7

DIODES · FETs & Power MOSFETs · MPN DMT6009LFG-7

No reviews yet — be the first to review DIODES DMT6009LFG-7.

Specifications

Gate Charge(Qg)33.5nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation19.2W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.925nF

Technical details

N-Channel 60V 34A 19.2W Surface Mount PowerDI3333-8

Related FETs & Power MOSFETs