DIODES DMT6008LFG-13

DIODES · FETs & Power MOSFETs · MPN DMT6008LFG-13

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Specifications

Gate Charge(Qg)50.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)11.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.713nF

Technical details

60V 60A 2V 2.2W 11.5mΩ@4.5V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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