DIODES DMT6007LFGQ-7

DIODES · FETs & Power MOSFETs · MPN DMT6007LFGQ-7

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Specifications

Gate Charge(Qg)41.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)746pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)38.5pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.09nF

Technical details

N-Channel 60V 80A 2.2W Surface Mount PowerDI3333-8

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