DIODES · FETs & Power MOSFETs · MPN DMT6006LSS-13
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| Gate Charge(Qg) | 34.9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 14.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.08W |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.162nF |
60V 14.6A 2.5V 2.08W 6.5mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS